Onsemi FDMS86150 especificações técnicas, atributos, parâmetros.
Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
製品ステータス:Active
動作温度:-55°C ~ 150°C (TJ)
取り付けタイプ:Surface Mount
パッケージ/ケース:8-PowerTDFN
テクノロジー:MOSFET (Metal Oxide)
サプライヤーデバイスパッケージ:8-PQFN (5x6)
消費電力(最大):2.7W (Ta), 156W (Tc)
F E Tタイプ:N-Channel
F E T機能:-
ドレイン-ソース電圧 ( Vdss):100 V
電流 - 連続ドレイン ( Id) @ 25° C:16A (Ta), 60A (Tc)
Rds オン (最大) @ Id、 Vgs:4.85mOhm @ 16A, 10V
Vgs(th) (最大) @ Id:4V @ 250µA
ゲート電荷 ( Qg) (最大) @ Vgs:62 nC @ 10 V
入力容量 ( Ciss) (最大) @ Vds:4065 pF @ 50 V
駆動電圧(最大 Rds オン、最小 Rds オン):6V, 10V
Vgs (最大):±20V
EU RoHS ステータス:RoHS Compliant
REACH規則:REACH is not affected
輸出規制分類番号:EAR99
中国の RoHS ステータス:Green Symbol: Green and environmentally friendly product
Onsemi FDMS86150 Detalhes
of Fairchild Semiconductor FDMS86150
The FDMS86150 is a N-channel MOSFET designed for high-speed switching applications in power management systems. It features low on-resistance (R_DS(on)), a high threshold voltage for robust performance, and a compact package suitable for embedded applications. This device is part of Fairchild Semiconductor's discrete semiconductor offerings and is commonly used in power supplies, DC-DC converters, and other power management designs.
Functions
1. Switching Applications: The FDMS86150 functions as a switch in various applications, enabling efficient power transfer.
2. High-Speed Switching: Due to its low gate charge and low on-resistance, this MOSFET allows for fast switching, which improves efficiency in power circuits.
3. Voltage Regulation: Ideal for applications requiring precise voltage regulation, such as in power supplies and converters.
4. Thermal Management: Designed with appropriate thermal characteristics to dissipate heat efficiently during operation.
Applications
- Power Management: Used in power supply designs, including step-down (buck) converters.
- DC-DC Converters: Suitable for applications that require converting one DC voltage level to another efficiently.
- Load Switching: Can control various types of loads in consumer electronics and industrial applications.
- Battery Management Systems: Efficiently switch and regulate battery voltages for charging and discharging processes.
- LED Drivers: Can be used in circuits that drive LED lighting, ensuring appropriate power levels and efficiency.
Alternative Parts
When seeking alternatives to the FDMS86150, consider the following N-channel MOSFETs which have similar specifications:
1. IRF3708: A high-performance MOSFET with a similar current and voltage rating, suitable for high-speed applications.
2. BSS138: A smaller package alternative for less demanding applications, offers good performance in lower power scenarios.
3. AOD484: An ultra-low R_DS(on) MOSFET that is suitable for power management applications.
4. STP16NF06: Offers a similar voltage rating with a higher current rating, suitable for industrial uses.
5. SIR160AP: A robust option with similar application scope, also designed for efficient switching.
Embedded Modules
Embedded modules that could utilize or be compatible with the FDMS86150 include:
- Power Management ICs: Modules that integrate voltage regulators or DC-DC converters where this MOSFET acts as a switching element.
- Microcontroller Boards: Such as Arduino or Raspberry Pi embedded systems utilizing this MOSFET for driving loads.
- LED Driver Modules: Integrated circuits designed for controlling LED brightness which require efficient switching.
- Battery Management Systems: Modules designed for managing rechargeable batteries, wherein this MOSFET regulates voltage and current flow.
Related Q&A
1. Q: What are the key specifications of the FDMS86150?
A: The FDMS86150 features a maximum drain-source voltage of 30V and a continuous drain current of up to 30A, along with a low R_DS(on) of 0.025 ohms.
2. Q: In what applications can I use the FDMS86150?
A: It is typically used in power management applications, such as DC-DC converters, LED drivers, and battery management systems where efficient switching is required.
3. Q: What makes the FDMS86150 suitable for high-speed switching?
A: Its low gate charge, low on-resistance, and fast transition times allow it to switch quickly and reduce power losses, making it ideal for high-speed applications.
4. Q: Can the FDMS86150 be replaced with other MOSFETs?
A: Yes, alternatives like the IRF3708 or the AOD484 can be suitable replacements, provided they meet the voltage and current specifications required for your application.
5. Q: What is the importance of R_DS(on) in the FDMS86150?
A: R_DS(on) represents the resistance between the drain and source terminals when the MOSFET is on; lower values reduce conduction losses and improve overall power efficiency in circuits.